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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2365/2SK2366
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching
3.0 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 0.2 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX.
applications.
4.8 MAX. 1.3 0.2
FEATURES
* Low On-Resistance
2SK2365: RDS(on) = 0.5 (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 (VGS = 10 V, ID = 5.0 A)
4 123
* Low Ciss Ciss = 1 600 pF TYP. * High Avalanche Capability Ratings * Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2365/2SK2366) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 30 10 40 75 1.5 150 10 143 V V A A W W C A mJ
6.0 MAX.
1.3 0.2 0.75 0.1 2.54
0.5 0.2 2.8 0.2
2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4
1.0 0.5 8.5 0.2 1.5 MAX.
4.8 MAX. 1.3 0.2
1.4 0.2
-55 to +150 C
1.0 0.3 (2.54) (2.54) 123
1.1 0.4 3.0 0.5
R) ) .5 R (0 0.8 (
0.5 0.2
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
2.8 0.2
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Body Diode Gate
Source
Document No. TC-2503 (O. D. No. TC-8062) Date Published February 1995 P Printed in Japan
(c)
1995
2SK2365/2SK2366
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on) MIN. TYP. 0.4 0.5 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1 600 310 30 30 20 80 20 42 10 20 1.0 350 1.5 2.5 4.0 100 100 MAX. 0.5 0.6 3.5 V S UNIT TEST CONDITIONS VGS = 10 V ID = 5.0 A 2SK2365 2SK2366
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 5.0 A VGS = 10 V VDD = 150 V RG = 10 RL = 30 ID = 10 A VDD = 400 V VGS = 10 V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 di/dt = 50 A/s
A
nA pF pF pF ns ns ns ns nC nC nC V ns
C
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 - 0 V 50
Test Circuit 2 Switching Time
D.U.T.
L VDD PG. RG RG = 10
RL
VGS
Wave Form
VGS
0 10 % VGS (on) 90 %
VDD
ID
90 % 90 % ID
BVDSS IAS ID VDD VDS
VGS 0 t t = 1us Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2365/2SK2366
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
80
60
60
40
40
20
20
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 24 ID (pulse) P W
10
1 m
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = 20 V 10 V 8V 6V
ID - Drain Current - A
10
R
D
o S(
(at
VG
s
ID - Drain Current - A
n)
d ite ) Lim 10 V = S
ID (DC)
=
0
10
20
s
Po
w
er
Di
10
10
s
m s
16 12 8 4
ss
0
1.0
ipa
m
s
tio
n
Lim
2SK2366 2SK2365
ite
d
0.1 1
TC = 25 C Single Pulse 10 100 1 000 0 4 8 12 16 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V
100
Pulsed
ID - Drain Current - A
10
1
TA = 125 C 75 C 25 C -25 C
0.1
0
5
10
15
VGS - Gate to Source Voltage - V
3
2SK2365/2SK2366
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 Rth (ch-a) = 83.3 C/W
100
10 Rth (ch-c) = 1.67 C/W 1
0.1
0.01 TC = 25 C Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s
RDS (on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed
10
1.0 ID = 10 A 5A 2.5 A 0.5
1.0
0.1
1.0
10
100
0
10
20
30
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS (off) - Gate to Source Cutoff Voltage - V 2.0 Pulsed 4.0
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA
RDS (on) - Drain to Source On-State Resistance -
3.0
1.0 VGS = 10 V
2.0
1.0
0
1.0
10 ID - Drain Current - A
100
0 -50
0
50
100
150
Tch - Channel Temperature - C
4
2SK2365/2SK2366
RDS (on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.5
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100
1.0
ID = 10 A 5A
10 VGS = 10 V 1.0 VGS = 0
0.5
0.1 0 0.5 1.0 1.5
VGS = 10 V 0 -50 0 50 100 150
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
td (on), tr, td (off), tf - Switching Time - ns
VSD - Source to Drain Voltage - V
0 10 000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1 000 tr 100 tf td (on) td (off) 10
VGS = 0 f = 1 MHz Ciss
1 000 Coss 100 Crss
10 1
10
100
1 000
1.0 0.1
1.0
VDS = 150 V VGS = 10 V RG = 10 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 ID = 10 A
VDS - Drain to Source Voltage - V
300
1 000
VDD = 400 V 250 V 125 V
12 VGS 10 8 6
200
100 VDS
4 2 20 30 40
100 10 0.1
1.0
10
100
0
10
ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 50 A/s VGS = 0
16 14
5
2SK2365/2SK2366
SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 150 EAS - Single Avalanche Energy - mJ IAS - Single Avalanche Current - A ID (peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V 100
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25 C IAS = 10 A
EA
S
100
10
=
14
3m
J
50
1.0
0 25
50
75
100
125
150
175
100 u
1.0 m
10 m
100 m
L - Inductive load - H
6
2SK2365/2SK2366
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2365/2SK2366
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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